H10D 1/684
The dielectrics comprising multiple layers
Official title: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers}
H10D1/684 (The dielectrics comprising multiple layers) appears on 966 US grants and 918 published applications in this corpus.
Search patents in H10D- Granted patents
- 966
- Published applications
- 918
- Assignees
- 223
- Inventors
- 1,548
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 13 | 0 |
| 1996 | 11 | 0 |
| 1997 | 15 | 0 |
| 1998 | 28 | 0 |
| 1999 | 25 | 0 |
| 2000 | 34 | 0 |
| 2001 | 67 | 29 |
| 2002 | 57 | 69 |
| 2003 | 59 | 72 |
| 2004 | 67 | 61 |
| 2005 | 42 | 60 |
| 2006 | 50 | 55 |
| 2007 | 27 | 23 |
| 2008 | 25 | 30 |
| 2009 | 19 | 20 |
| 2010 | 20 | 15 |
| 2011 | 14 | 12 |
| 2012 | 13 | 20 |
| 2013 | 18 | 20 |
| 2014 | 20 | 15 |
| 2015 | 21 | 24 |
| 2016 | 12 | 10 |
| 2017 | 8 | 12 |
| 2018 | 16 | 13 |
| 2019 | 15 | 14 |
| 2020 | 13 | 32 |
| 2021 | 12 | 44 |
| 2022 | 42 | 57 |
| 2023 | 57 | 83 |
| 2024 | 56 | 50 |
| 2025 | 46 | 55 |
| 2026 | 33 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Calabash-shaped MIM capacitor structure and fabricating method of the same6 Oct 2026US 12,757,418 B2United Microelectronics Corp.
- Integrated circuit device8 Sep 2026US 12,733,185 B2Samsung Electronics Co., Ltd.
- Semiconductor device1 Sep 2026US 12,727,180 B2Pusan National University Industry-University Cooperation
- Integrated circuits with high dielectric constant interfacial layering25 Aug 2026US 12,720,778 B2Intel Corporation
- Fabrication of reconfigurable architectures using ferroelectrics25 Aug 2026US 12,720,859 B2Intel Corporation
- Semiconductor device including barrier dielectric layer including ferroelectric material17 Sep 2026US 2026/0282385 A1SK hynix Inc.
- Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device17 Sep 2026US 2026/0282404 A1Samsung Electronics Co., Ltd.
- Semiconductor manufacturing high-k dielectric by hzz stack13 Aug 2026US 2026/0239625 A1Nanya Technology Corporation
- Capacitor devices with strontium titanate insulator layers13 Aug 2026US 2026/0239635 A1Intel Corporation
- Capacitor including a tetragonal hafnium zirconium oxide node dielectric and methods of forming the same30 Jul 2026US 2026/0223379 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same626US 6,297,539 B1Sharp Laboratories of America, Inc. · 2001
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Methods and apparatus for material deposition577US 5,119,760 ASymetrix Corporation · 1992
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004