Capacitor including a tetragonal hafnium zirconium oxide node dielectric and methods of forming the same

A method of forming a device structure, comprising:

• depositing a first metallic electrode layer over a substrate;
• depositing a node dielectric layer comprising a layer stack containing at least a first amorphous hafnium zirconium oxide layer having a material composition of Hf(1-α)ZrαO2 and a first high band gap dielectric layer over the first metallic electrode layer, wherein a value of α is in a range from 0.50 to 0.90, and wherein the first high band gap dielectric layer comprises a first dielectric material having a first band gap greater than 6 eV;
• depositing a second metallic electrode layer over the node dielectric layer;
• and
• annealing the first amorphous hafnium zirconium oxide layer into a first crystalline hafnium zirconium oxide layer.

A device structure comprising:

• a first metallic electrode layer overlying, or located within, a substrate;
• a node dielectric layer comprising a crystalline hafnium zirconium oxide layer having a material composition of Hf(1-β)ZrβO2 wherein a value of α is in a range from 0.50 to 0.90;
• and
• a second metallic electrode layer over the node dielectric layer, wherein a fraction of hafnium zirconium oxide in a tetragonal phase is greater than a fraction of hafnium zirconium oxide in an orthorhombic phase for the crystalline hafnium zirconium oxide layer.