Semiconductor device including barrier dielectric layer including ferroelectric material
AssigneeSK hynix Inc.
InventorsDong Ik SUH, Won Tae KOO
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Abstract
A semiconductor device according to another embodiment of the present disclosure may include a substrate including a channel region, a gate dielectric structure disposed over the channel region, a gate electrode disposed over the gate dielectric structure, and a barrier dielectric layer disposed between the channel region and the gate dielectric structure or between the gate dielectric structure and the gate electrode. The capacitor dielectric structure may include a ferroelectric layer and a dielectric layer. The barrier dielectric layer may include a ferroelectric material.
Claims27
A semiconductor device comprising:
- a substrate including a channel region;
- a gate dielectric structure disposed over the channel region, the gate dielectric structure including a ferroelectric layer and a dielectric layer;
- a gate electrode disposed over the gate dielectric structure;
- and
- a barrier dielectric layer disposed between the channel region and the gate dielectric structure or between the gate dielectric structure and the gate electrode, the barrier dielectric layer including a ferroelectric material.
A semiconductor device comprising:
- a substrate;
- an active layer disposed over the substrate;
- a gate dielectric structure disposed over the active layer, the gate dielectric structure including a ferroelectric layer and a dielectric layer;
- a gate electrode disposed adjacent to the gate dielectric structure;
- and
- a barrier dielectric layer disposed between the active layer and the gate dielectric structure or between the gate dielectric structure and the gate electrode, and the barrier dielectric layer including a ferroelectric material.
Dependencies are inferred from the claim text.