Semiconductor device and method for driving semiconductor device

A semiconductor device comprising:

• a memory cell comprising:
• a transistor;
• and
• a capacitor comprising a first electrode, a ferroelectric stacked over and in contact with the first electrode, and a second electrode stacked over and in contact with the ferroelectric;
• and
• first to fourth wirings,
• wherein a gate of the transistor is electrically connected to the first wiring,
• wherein a back gate of the transistor is electrically connected to the fourth wiring,
• wherein one of a source and a drain of the transistor is electrically connected to the second wiring,
• wherein the other of the source and the drain of the transistor is electrically connected to the first electrode of the capacitor,
• wherein the second electrode of the capacitor is electrically connected to the third wiring,
• wherein the semiconductor device is configured to supply a potential bringing the transistor into an on state or an off state to the first wiring,
• wherein the semiconductor device is configured to supply a first potential or a second potential to the second wiring,
• wherein the semiconductor device is configured to supply a third potential, a fourth potential, or a fifth potential to the third wiring,
• wherein the transistor comprises an oxide semiconductor in a channel formation region, and
• wherein in a cross-sectional view, the first electrode and the second electrode of the capacitor do not overlap the gate of the transistor.