H10D 1/688
Comprising barrier layers to prevent diffusion of hydrogen or oxygen
Official title: {comprising barrier layers to prevent diffusion of hydrogen or oxygen}
H10D1/688 (Comprising barrier layers to prevent diffusion of hydrogen or oxygen) appears on 351 US grants and 395 published applications in this corpus.
Search patents in H10D- Granted patents
- 351
- Published applications
- 395
- Assignees
- 80
- Inventors
- 465
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 3 |
| 2002 | 7 | 16 |
| 2003 | 11 | 13 |
| 2004 | 15 | 42 |
| 2005 | 29 | 42 |
| 2006 | 23 | 45 |
| 2007 | 26 | 31 |
| 2008 | 22 | 36 |
| 2009 | 28 | 14 |
| 2010 | 20 | 20 |
| 2011 | 15 | 4 |
| 2012 | 6 | 8 |
| 2013 | 14 | 11 |
| 2014 | 13 | 7 |
| 2015 | 4 | 9 |
| 2016 | 8 | 7 |
| 2017 | 8 | 6 |
| 2018 | 4 | 5 |
| 2019 | 6 | 5 |
| 2020 | 1 | 9 |
| 2021 | 8 | 9 |
| 2022 | 13 | 9 |
| 2023 | 18 | 22 |
| 2024 | 27 | 10 |
| 2025 | 16 | 7 |
| 2026 | 4 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Capacitor, semiconductor device including the capacitor, method of fabricating the capacitor7 May 2026US 2026/0129864 A1Samsung Electronics Co., Ltd.
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- Self-healing ferroelectric capacitors with endurance improvement at high temperatures7 May 2026US 2026/0130131 A1Georgia Tech Research Corporation
- Memory cell including spontaneously polarizable capacitor structure23 Apr 2026US 2026/0113954 A1Ferroelectric Memory GmbH
Most cited
By later US patents
- Systems and methods for forming refractory metal nitride layers using organic amines119US 6,967,159 B2Micron Technology, Inc. · 2005
- Method of fabricating a ferroelectric memory cell114US 6,548,343 B1Agilent Technologies Texas Instruments Incorporated · 2003
- Hydrogen-free contact etch for ferroelectric capacitor formation102US 6,485,988 B2Texas Instruments Incorporated · 2002
- Systems and methods for forming tantalum silicide layers84US 6,995,081 B2Micron Technology, Inc. · 2006
- Systems and methods of forming refractory metal nitride layers using organic amines74US 7,300,870 B2Micron Technology, Inc. · 2007