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US 6,967,159 B2Granted
Systems and methods for forming refractory metal nitride layers using organic amines
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.
Claims23
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more silicon precursor compounds;
- providing a vapor comprising one or more organic amines;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the semiconductor substrate or substrate assembly to form a refractory metal silicon nitride layer on a surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles using sequential pulsing of the reactants to separate the reaction components.
3 more elements
A method of forming a layer on a substrate, the method comprising:
- providing a substrate;
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom or an organic group, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more silicon prescursor compounds;
- providing a vapor comprising one or more organic amines;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds, the one or more silicon precursor compounds, and the one or more organic amines to the substrate to form a refractory metal silicon nitride layer on a surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cyclesusing sequential pulsing of the reactants to separate the reaction components.
3 more elements
Dependencies are inferred from the claim text.