Self-healing ferroelectric capacitors with endurance improvement at high temperatures

A method of fabricating a ferroelectric device, comprising:

• depositing a first electrode;
• depositing an oxygen reservoir layer on the first electrode;
• depositing a ferroelectric layer comprising a hafnium-based oxide on the oxygen reservoir layer;
• and
• depositing a second electrode on the ferroelectric layer,
• wherein the oxygen reservoir layer is configured to supply oxygen ions to the ferroelectric layer during operation of the ferroelectric device.

A ferroelectric capacitor, comprising:

• a bottom electrode comprising tungsten;
• a top electrode;
• a ferroelectric layer disposed between the bottom electrode and the top electrode, the ferroelectric layer comprising hafnium zirconium oxide;
• a first oxygen reservoir layer disposed between the bottom electrode and the ferroelectric layer;
• and
• a second oxygen reservoir layer disposed between the ferroelectric layer and the top electrode, wherein each of the first oxygen reservoir layer and the second oxygen reservoir layer comprises tungsten oxide and is configured to reduce oxygen vacancy formation in the ferroelectric layer during cycling operations.