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US 6,995,081 B2Granted
Systems and methods for forming tantalum silicide layers
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.
Claims30
A method of forming a layer on a substrate, the method comprising:
- providing a substrate comprising a silicon-containing surface;
- providing a vapor comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- providing a vapor comprising one or more silicon precursor compounds;
- and
- directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the substrate to form a tantalum silicide layer on one or more surfaces of the substrate,
- wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the substrate and allowed to chemisorb on the silicon-containing surface,
- wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.
4 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly comprising a silicon-containing surface;
- providing a vapor comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- providing a vapor comprising one or more silicon precursor compounds;
- and
- directing the vapors comprising the one or more tantalum precursor compounds and the one or more silicon precursor compounds to the semiconductor substrate or substrate assembly to form a tantalum suicide layer on one or more surfaces of the semiconductor substrate or substrate assembly,
- wherein the vapor comprising the one or more precursor compounds of the Formula I is directed to the semiconductor substrate or substrate assembly and allowed to chemisorb on the silicon-containing surface,
- wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.
4 more elements
A method of manufacturing a memory device, the method comprising:
- providing a substrate comprising a silicon-containing surface;
- providing a vapor comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface;
- providing a vapor comprising one or more silicon precursor compounds;
- directing the vapor comprising the one or more silicon precursor compounds to the substrate with the chemisorbed compounds thereon to form a tantalum silicide barrier layer on the silicon-containing surface;
- providing a first electrode on the barrier layer;
- providing a high dielectric material over at least a portion of the first electrode;
- and
- providing a second electrode over the high dielectric material,
- wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles, with the proviso that the method does not include providing a vapor comprising one or more nitrogen precursor compounds.
7 more elements
Dependencies are inferred from the claim text.