Capacitor, semiconductor device including the capacitor, method of fabricating the capacitor

A semiconductor device comprising:

• a substrate;
• a gate structure on the substrate;
• a source region and a drain region being apart from each other in the substrate;
• and
• a capacitor over the substrate,
• wherein the capacitor comprises
• a first electrode,
• a ferroelectric layer on the first electrode,
• a second electrode on the ferroelectric layer, and
• an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, and
• wherein the interfacial layer comprises a perovskite structure material,
• the interfacial layer comprises an oxide of metals, the metals comprising a divalent cation, a tetravalent cation, and a trivalent cation, and
• the trivalent cation comprises at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In.

A method of fabricating a capacitor, the method comprising:

• forming a ferroelectric layer on a first electrode;
• forming a second electrode on the ferroelectric layer;
• and
• forming an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode,
• wherein the interfacial layer has a perovskite structure material,
• the interfacial layer comprises an oxide of metals, the metals comprise a divalent cation, a tetravalent cation, and a trivalent cation, and
• the trivalent cation comprises at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, or In.