Hydrogen-free contact etch for ferroelectric capacitor formation

A method of forming a conductive contact to a top electrode of a ferroelectric capacitor comprised of a bottom electrode situated under said top electrode and a ferroelectric material situated between said top electrode and said bottom electrode, said method comprising the steps of:

• forming a hydrogen diffusion barrier over said top electrode;
• forming an etch stop layer over the hydrogen diffusion barrier;
• forming a layer over said hydrogen diffusion barrier and said etch stop layer;
• forming an opening in said layer to expose a portion of said etch stop layer by etching said opening in said layer using a first etchant;
• and
• etching said exposed portion of said etch stop layer and said hydrogen diffusion barrier to form an opening to the top electrode using a hydrogen-free etchant.