Semiconductor device including ferroelectric layer, dielectric layer, and charge trap site, and method of fabricating the same
AssigneeSK hynix Inc.
InventorsWon Tae Koo, Dong Ik Suh
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Abstract
A semiconductor device includes a first electrode, a ferroelectric layer disposed on the first electrode, a dielectric layer disposed on the ferroelectric layer, charge trap sites disposed in an inner region of the dielectric layer, and a second electrode disposed on the dielectric layer. The dielectric layer may have a non-ferroelectric property. The dielectric layer and the ferroelectric layer are disposed between the first electrode and the second electrode and connected in series to each other. The semiconductor device may include charge trap sites distributed in an inner region of the dielectric layer having a non-ferroelectric property.
Claims10
A semiconductor device comprising:
- a first electrode;
- a ferroelectric layer disposed over the first electrode;
- a first sub-dielectric layer disposed over the ferroelectric layer;
- a plurality of self-aggregated metal particles disposed on the first sub-dielectric layer, the plurality of self-aggregated metal particles formed from a metal layer having a thickness of 0.1 nm to 3 nm;
- a second sub-dielectric layer disposed over the first sub-dielectric layer, the second sub-dielectric layer covering the plurality of self-aggregated metal particles;
- and
- a second electrode disposed over the second sub-dielectric layer,
- wherein the first sub-dielectric layer is made of the same material as the second sub-dielectric layer.
A semiconductor device comprising:
- a substrate;
- a storage node electrode disposed over the substrate;
- a plate electrode disposed to be spaced apart from the storage node electrode;
- a ferroelectric layer disposed over the storage node electrode,
- a first sub-dielectric layer disposed over the ferroelectric layer;
- a plurality of self-aggregated metal particles disposed on the first sub-dielectric layer, the plurality of self-aggregated metal particles formed from a metal layer having a thickness of 0.1 nm to 3 nm;
- a second sub-dielectric layer disposed over the first sub-dielectric layer, the second sub-dielectric layer covering the plurality of self-aggregated metal particles;
- and
- a second electrode disposed over the second sub-dielectric layer,
- wherein the first sub-dielectric layer is made of the same material as the second sub-dielectric layer.
Dependencies are inferred from the claim text.