H01S 5/34
Comprising quantum well or superlattice structures
Official title: comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence)
H01S5/34 (Comprising quantum well or superlattice structures) appears on 5,441 US grants and 5,408 published applications in this corpus.
Search patents in H01S- Granted patents
- 5,441
- Published applications
- 5,408
- Assignees
- 1,057
- Inventors
- 6,680
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 12 | 0 |
| 1987 | 12 | 0 |
| 1988 | 36 | 0 |
| 1989 | 45 | 0 |
| 1990 | 34 | 0 |
| 1991 | 53 | 0 |
| 1992 | 51 | 0 |
| 1993 | 61 | 0 |
| 1994 | 79 | 0 |
| 1995 | 72 | 0 |
| 1996 | 95 | 0 |
| 1997 | 80 | 0 |
| 1998 | 128 | 0 |
| 1999 | 105 | 0 |
| 2000 | 85 | 0 |
| 2001 | 77 | 33 |
| 2002 | 88 | 165 |
| 2003 | 158 | 175 |
| 2004 | 163 | 200 |
| 2005 | 145 | 272 |
| 2006 | 173 | 212 |
| 2007 | 132 | 263 |
| 2008 | 139 | 267 |
| 2009 | 201 | 239 |
| 2010 | 272 | 259 |
| 2011 | 213 | 244 |
| 2012 | 194 | 217 |
| 2013 | 187 | 194 |
| 2014 | 211 | 167 |
| 2015 | 225 | 220 |
| 2016 | 197 | 170 |
| 2017 | 181 | 187 |
| 2018 | 179 | 200 |
| 2019 | 204 | 221 |
| 2020 | 192 | 263 |
| 2021 | 196 | 268 |
| 2022 | 156 | 240 |
| 2023 | 174 | 232 |
| 2024 | 155 | 211 |
| 2025 | 147 | 155 |
| 2026 | 122 | 134 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01S 5/343In aiiibv compounds3,984
- H01S 5/3401Having no pn junction555
- H01S 5/341Structures having reduced dimensionality498
- H01S 5/3403Having a strained layer structure in which the strain performs a special456
- H01S 5/3407Characterised by special barrier layers247
- H01S 5/347In aiibvi compounds136
- H01S 5/3413Comprising partially disordered wells or barriers122
- H01S 5/3415Containing details related to carrier capture times into wells or barriers121
All 19 subgroupsShow fewer
- H01S 5/3428Layer orientation perpendicular to the substrate118
- H01S 5/3408Characterised by specially shaped wells108
- H01S 5/3409Special grinsch structures98
- H01S 5/3422Comprising type-ii quantum wells or superlattices77
- H01S 5/3425Comprising couples wells or superlattices73
- H01S 5/3418Using transitions from higher quantum levels49
- H01S 5/3427In iv compounds45
- H01S 5/342Containing short period superlattices [sps]29
- H01S 5/3421Layer structure of quantum wells to influence the near/far field20
- H01S 5/3426In aivbvi compounds8
- H01S 5/3424Comprising freestanding wells4
Recent patents
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- Multi-cavity cascaded coupled vertical-cavity surface-emitting laser and manufacture method thereof1 Oct 2026US 2026/0302730 A1University of Electronic Science and Technology of China
- Quantum cascade laser device and method for manufacturing quantum cascade laser device1 Oct 2026US 2026/0302731 A1Mitsubishi Electric Corporation
- Single photon source device1 Oct 2026US 2026/0302732 A1Institute of Science Tokyo
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Optical systems fabricated by printing-based assembly564US 7,972,875 B2The Board of Trustees of the University of Illinois · 2011
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Light-emitting semiconductor device462US 5,696,389 AKabushiki Kaisha Toshiba · 1997