H01S 5/3427
In iv compounds
Official title: {in IV compounds}
H01S5/3427 (In iv compounds) appears on 45 US grants and 40 published applications in this corpus.
Search patents in H01S- Granted patents
- 45
- Published applications
- 40
- Assignees
- 30
- Inventors
- 98
- Latest grant
- 22 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 2 |
| 2008 | 0 | 0 |
| 2009 | 1 | 2 |
| 2010 | 2 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 2 | 2 |
| 2015 | 2 | 4 |
| 2016 | 4 | 2 |
| 2017 | 1 | 1 |
| 2018 | 1 | 2 |
| 2019 | 3 | 7 |
| 2020 | 5 | 5 |
| 2021 | 0 | 1 |
| 2022 | 5 | 5 |
| 2023 | 2 | 2 |
| 2024 | 4 | 1 |
| 2025 | 1 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method22 Jul 2025US 12,368,282 B2FuJian Z.K. Litecore,Ltd.
- Methods of manufacture of advanced wafer bonded heterojunction bipolar transistors31 Dec 2024US 12,183,812 B2
- Light-emitting or light-absorbing component20 Aug 2024US 12,065,601 B2Technische Universiteit Eindhoven
- Optical device and method of forming the same16 Apr 2024US 11,962,128 B2Nanyang Technological University
- Electrical devices making use of counterdoped junctions30 Jan 2024US 11,888,079 B2Quantum Semiconductor LLC
- Tensile strained semiconductor photon emission and detection devices and integrated photonics system22 May 2025US 2025/0167523 A1Acorn Semi, LLC
- Tensile strained semiconductor photon emission and detection devices and integrated photonics system15 May 2025US 2025/0158362 A1Acorn Semi, LLC
- Optical device and method of forming the same14 Mar 2024US 2024/0088628 A1Nanyang Technological University
- Tensile strained semiconductor photon emission and detection devices and integrated photonics system26 Oct 2023US 2023/0344200 A1Acorn Semi, LLC
- Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices2 Feb 2023US 2023/0031642 A1
Most cited
By later US patents
- Silicon-based strain-symmetrized GE-SI quantum lasers135US 6,154,475 AThe United States of America as represented by the Secretary of the Air Force · 2000
- Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same94US 5,523,592 AHitachi, Ltd. · 1996
- Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates55US 5,548,128 AThe United States of America as represented by the Secretary of the Air Force · 1996
- Periodic monolayer semiconductor structures grown by molecular beam epitaxy43US 4,205,329 ABell Telephone Laboratories, Incorporated · 1980
- Laser diode and method of fabrication thereof32US 6,151,347 ANortel Networks Limited · 2000