O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method

A manufacturing method of O-band silicon-based high-speed semiconductor laser diode for optical communication, characterized in that, the growth of the epitaxial structure includes the following steps:

• Step 1:
• buffer layer growth;
• baking the N—Si substrate at high temperature with nitrogen atmosphere for 15 min in the MOCVD chamber, followed by growing 300 nm N—GaP buffer layer;
• baking it at high temperature with PH atmosphere for 15 min, and then growing 300 nm N—GaAs buffer layer;
• followed by baking it at high temperature with AsH3 atmosphere for 15 min, and growing 500 nm N—InP buffer layer;
• Step S2:
• the epi-growth sequence above the buffer are as follow:
• 15 nm N—AlGaInAs graded layer, 30 nm undoped AlGaInAs lower waveguide layer;
• 20 nm undoped AlGaInAs lower SCH layer;
• 7 layers of 8 nm-AlGaInAs tensile strain quantum wells with at least −1.3% strain, 8 layers of 10 nm-AlGaInAs compressive strain quantum barriers with at least +0.4% strain, the barriers consist of 3 layers of 2 nm-AlGaInAs barriers and 2 layers of 2 nm-AlGaInAs well superlattice structure;
• 15 nm AlGaInAs upper SCH layer, 25 nm P—InAlAs electron blocking layer;
• 50 nm P—InP space layer, 40 nm P—InGaAsP grating layer and preparing uniform gratings;
• Step S3:
• depositing SiO2 dielectric layer of 200 nm by PECVD, removing the area of 20 μm near the front and rear facet of the chip by photolithographic etching, carrying out isotropic etching with dilute bromine:
• hydrobromic acid solution, etching depth to the N—InP buffer layer;
• followed by sequential growing 100 nm P—InP, 50 nm N—InGaAsP, 100 nm P—InP;
• Step S4:
• removing the surface SiO2 layer after the PNP blocking layer growth, then the following materials are growth in sequence by MOCVD:
• 10 nm P—InP grating buried layer, 25 nm P—InGaAsP etch stop layer, 2.0 micron P—InP space layer, 50 nm P—InGaAsP grated layer, 250 nm P—InGaAs contact layer, 300 nm Fe-doped InP layer, completing the growth of the epi-wafer.