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US 6,154,475 AGranted
Silicon-based strain-symmetrized GE-SI quantum lasers
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsRichard A. Soref, Lionel R. Friedman
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Abstract
A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed buffer layer in turn grown on the Si wafer, and an intrinsic strain-symmetric Ge--Si superlattice covered by a heavily doped stably strained SiGe emitter. The superlattice has numerous thin 8-15 atomic monolayers of interleaved Ge and Si atoms, enabling high stack heights.
Claims26
A laser comprising:
- (a) a silicon platform;
- (b) a silicon-germanium graded relaxed buffer layer formed upon said silicon platform;
- (c) collector means including a highly doped stably strained SiGe or germanium collector layer formed over said silicon-germanium graded relaxed buffer layer;
- (d) an intrinsic strain-symmetric Ge--Si superlattice positioned over said SiGe or germanium collector layer;
- (e) emitter means including a heavily doped stably strained SiGe emitter layer positioned over said Ge--Si superlattice;
- and
- (f) foward biasing means coupled to said emitter means and said collector means for enabling light production by said laser.
4 more elements
A laser comprising:
- (a) a silicon platform;
- (b) a silicon-germanium or germanium graded relaxed buffer layer formed upon said silicon platform;
- (c) silicon-germanium or germanium stably strained collector means formed over said graded relaxed buffer layer;
- (d) an intrinsic strain-symmetric Ge--Si superlattice positioned over said germanium collector layer;
- (e) emitter means including a stably strained SiGe emitter layer positioned over said Ge--Si superlattice;
- and
- (f) foward biasing means coupled to said emitter means and said collector means for enabling light production by said laser.
4 more elements
A laser comprising:
- (a) a silicon platform;
- (b) a silicon-germanium graded relaxed buffer layer formed upon said silicon platform;
- (c) carrier emitter means and carrier collector means supported by said graded relaxed buffer layer;
- (d) an intrinsic strain-symmetric Ge--Si superlattice positioned between said carrier emitter means and said carrier collector means and wherein each strain symmetric superlattice period of numerous stacked periods within said superlattice includes a layer of Ge of a thickness of between 8-15 atomic monolayers and a layer of Si having a thickness of between 8-15 atomic monolayers and wherein each Ge monolayer is in compression and each Si monolayer is in tension;
- and
- (e) electrical biasing means coupled to said emitter means and said collector means for enabling light production by said laser.
3 more elements
Dependencies are inferred from the claim text.