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US 12,183,812 B2Granted
Methods of manufacture of advanced wafer bonded heterojunction bipolar transistors
OwnerMatthew H. Kiminventor
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Abstract
Methods of manufacturing heterojunction bipolar transistors are described herein. An exemplary method can include providing an emitter/base stack comprising a substrate, a base over the substrate, and/or an emitter over the base. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.
Claims21
A method of manufacturing a heterojunction bipolar transistor, the method comprising:
- providing an emitter/base stack, the emitter/base stack comprising:
- a substrate;
- a base over the substrate;
- and
- an emitter over the base and coupled to the base;
- forming a collector, the collector comprising at least one of GaN or SiC;
- performing an epitaxial lift-off process on the emitter/base stack by epitaxially lifting-off the base and the emitter from the substrate while the emitter remains coupled to the base;
- and
- after performing the epitaxial lift-off process, wafer bonding the base to the collector while the emitter remains coupled to the base.
6 more elements
A method of manufacturing a heterojunction bipolar transistor, the method comprising:
- providing an emitter/base stack, the emitter/base stack comprising:
- a substrate;
- a separation layer over the substrate;
- a base over the separation layer over the substrate;
- and
- an emitter over the base and coupled to the base;
- etching the separation layer over the substrate for removal of the substrate from the emitter/base stack;
- forming a collector;
- and
- wafer bonding the base to the collector.
7 more elements
Dependencies are inferred from the claim text.