Electrical devices making use of counterdoped junctions

An optoelectronic device, comprising:

• an NMOS transistor having a source region and a drain region;
• a photodiode having a counterdoped heterojunction that is electrically connected to the source region or the drain region, the counterdoped heterojunction being selected from a group consisting of a pn junction or a p-i-n junction, the counterdoped junction including a first semiconductor doped with an n-type primary dopant and a second semiconductor doped with a p-type primary dopant;
• a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor being counterdoped, the first counterdoped component being doped with one or more counterdopants that are of a polarity that is the opposite to the polarity of the primary dopant included in the first counterdoped component;
• a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant being such that the counterdoped junction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.