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AssigneeHitachi, Ltd.
InventorsKiyokazu Nakagawa, Akio Nishida, Toshikazu Shimada
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By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, iii) mounting an n-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer and Si.sub.0.8 Ge.sub.0.2 layer, an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer, and a p-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si.sub.0.8 Ge.sub.0.1 Sn.sub.0.1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a first conductivity type buffer layer of Si.sub.1-X Ge.sub.X which is formed on said single crystalline Si substrate, a layered structure consisting of at least one pair of an Si.sub.1-Y Ge.sub.Y layer and Si.sub.1-Z Ge.sub.Z layer which are lattice-matched and formed alternately on said buffer layer, and a second conductivity type Si.sub.1-Y Ge.sub.Y layer which is formed on said layered structure, wherein X, Y, and Z satisfy the conditions that 0<X<0.5, 0<Y<0.5, 0<Z<0.5, Y<X, and Y<Z, and wherein said layered structure forms a light emitting region.
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a layered structure consisting of at least one pair of an undoped single crystalline Si layer and single crystalline Si.sub.1-A Ge.sub.A mixed crystal layer (0<A<1) which are lattice-matched and formed alternately on said single crystalline Si layer, a second undoped single crystalline Si layer which is mounted on said layered structure, and a second conductivity type Si.sub.1-B C.sub.B layer (0.ltoreq.B<1) which is mounted on said second undoped single crystalline Si layer, wherein said Si.sub.1-B C.sub.B layer has a wider band gap than said second undoped single crystalline Si layer to form a potential barrier and, said single crystalline Si.sub.1-A Ge.sub.A mixed crystal is a light emitting region.
A semiconductor optical device comprising a first conductivity type single crystalline Si.sub.1-C-D Ge.sub.C C.sub.D mixed crystal layer (0<C<1, 0<D<1), a layered structure consisting of at least one pair of an undoped single crystalline Si.sub.1-E-F Ge.sub.E C.sub.F mixed crystal layer (0<E<1, 0<F<1) and a single crystalline Si.sub.1-G Ge.sub.G mixed crystal layer (0<G<1) which are lattice-matched and formed alternately on said single crystalline Si.sub.1-C-D Ge.sub.C C.sub.D mixed crystal layer, a second undoped single crystalline Si.sub.1-E-F Ge.sub.E C.sub.F mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si.sub.1-H-I Ge.sub.H C.sub.1 mixed crystal layer (0.ltoreq.H<1, 0<I<1) which is mounted on said second undoped single crystalline Si.sub.1-E-F Ge.sub.E C.sub.F mixed crystal layer, wherein said single crystalline Si.sub.1-G Ge.sub.G mixed crystal layer is a light emitting region.
A semiconductor optical device comprising a first conductivity type single crystalline Si.sub.1-J Ge.sub.J mixed crystal layer (0.ltoreq.J<1), a layered structure consisting of at least one pair of an undoped single crystalline Si.sub.1-K Ge.sub.K mixed crystal layer (0.ltoreq.K<1) and a single crystalline Si.sub.1-L-M Ge.sub.L Sn.sub.M mixed crystal layer (0<L<1, 0<M<1) which are lattice-matched and formed alternately on said single crystalline Si.sub.1-J Ge.sub.J mixed crystal layer, a second undoped single crystalline Si.sub.1-K Ge.sub.K mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si.sub.1-N Ge.sub.N mixed crystal layer (0<N<1) which is mounted on said second undoped single crystalline Si.sub.1-K Ge.sub.K mixed crystal layer wherein said single crystalline Si.sub.1-L-M Ge.sub.L Sn.sub.M mixed crystal layer is a light emitting region.
Dependencies are inferred from the claim text.