H01S 5/3415
Containing details related to carrier capture times into wells or barriers
Official title: {containing details related to carrier capture times into wells or barriers}
H01S5/3415 (Containing details related to carrier capture times into wells or barriers) appears on 121 US grants and 134 published applications in this corpus.
Search patents in H01S- Granted patents
- 121
- Published applications
- 134
- Assignees
- 100
- Inventors
- 311
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 7 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 4 |
| 2003 | 3 | 6 |
| 2004 | 8 | 5 |
| 2005 | 4 | 4 |
| 2006 | 2 | 3 |
| 2007 | 4 | 3 |
| 2008 | 1 | 7 |
| 2009 | 1 | 2 |
| 2010 | 7 | 3 |
| 2011 | 3 | 1 |
| 2012 | 2 | 3 |
| 2013 | 2 | 8 |
| 2014 | 4 | 3 |
| 2015 | 5 | 2 |
| 2016 | 3 | 2 |
| 2017 | 1 | 2 |
| 2018 | 1 | 1 |
| 2019 | 4 | 4 |
| 2020 | 2 | 3 |
| 2021 | 2 | 6 |
| 2022 | 2 | 11 |
| 2023 | 7 | 13 |
| 2024 | 4 | 18 |
| 2025 | 10 | 14 |
| 2026 | 2 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Reducing auger recombination in semiconductor optical devices9 Jun 2026US 12,651,890 B2University of Surrey
- Semiconductor devices with structures for emitting or detecting light13 Jan 2026US 12,527,134 B2Squidled SAS
- HCG tunable VCSEL with integrated detector in the sacrificial layer25 Nov 2025US 12,483,003 B2Bandwidth10, LTD.
- Semiconductor laser diode including multiple active layers and a grating layer23 Sep 2025US 12,424,822 B2Visual Photonics Epitaxy Co., Ltd.
- Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode16 Sep 2025US 12,418,160 B2Lumentum Operations LLC
- Surface-emitting laser and surface-emitting laser array6 Aug 2026US 2026/0229847 A1Sony Group Corporation
- Optoelectronic device with vcsel providing a grid pattern16 Jul 2026US 2026/0204875 A1Bandwidth10, LTD.
- Hcg tunable vcsel with optical confinement via step index and regrowth9 Jul 2026US 2026/0196807 A1Bandwidth10, LTD.
- Vertical light emitting nanorod laser diode and method of thereof2 Jul 2026US 2026/0188980 A1Industrial Cooperation Foundation Jeonbuk National University
- High-power, high-efficiency infrared-emitting quantum cascade lasers4 Jun 2026US 2026/0155629 A1
Most cited
By later US patents
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Light emitting devices based on interband transitions in type-II quantum well heterostructures56US 5,588,015 AUniversity of Houston · 1996
- Nitride semiconductor device53US 6,838,693 B2Nichia Corporation · 2005
- Electrically pumped edge-emitting photonic bandgap semiconductor laser47US 6,674,778 B1Sandia Corporation · 2004
- Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure39US 6,046,096 ACanon Kabushiki Kaisha · 2000