Nitride semiconductor device
AssigneeNichia Corporation
InventorTokuya Kozaki
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Abstract
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.
Claims48
A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitrid semiconductor and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer;
- wherein said active layer has, as said barrier layer, a first barrier leyer and a second barrier layer sandwiching said well layer in between;
- said first barrier layer being arranged on p-side of said well layer and said second barrier layer being arranged on n-side of said well layer;
- the thickness of said first layer being greater than the thickness of said second barrier layer.
A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer;
- wherein said active layer has L (L≧2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=I, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier laye Bi;
- the thickness of the barrier layer BL being greater than the thickness of the barrier layer Bi (i≠L).
A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,
- wherein said active layer has a first barrier layer arranged in a outermost position close to said p-type nitride semiconductor layer and a second barrier layer arranged in a outermost position close to said n-type nitride semiconductor layer;
- the film thickness of said first barrier layer being greater than said second barrier layer.
Dependencies are inferred from the claim text.