Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
AssigneeCanon Kabushiki Kaisha
InventorToshihiko Ouchi
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Abstract
A method of fabricating a compound semiconductor layer structure including a layer containing nitrogen is provided. In a method of fabricating a device including a compound semiconductor layer structure, a portion of crystal of compound semiconductor, which is to be at least a portion of a function layer of the device, is irradiated with material including at least nitrogen, and element of V group of the irradiated portion is substituted by the nitrogen. In a fabrication method, a thickness of the N-substituted layer does not exceed its critical layer thickness. In a fabrication method, a depth of the N-substituted portion is controlled by using material for oppressing the substitution by nitrogen.
Claims18
A method of fabricating a semiconductor device comprising the steps of:
- epitaxially depositing a single-crystal compound semiconductive layer containing a Group V element and no nitrogen on a substrate;
- discontinuing performance of said epitaxially-depositing step;
- forming a nitrogen-containing layer on a part of the surface of the semiconductive layer by irradiating a surface of the semiconductive layer with a material containing at least nitrogen and substituting only a part of a Group V element in the semiconductive layer by nitrogen while discontinuing performance of said epitaxially-depositing step, wherein the semiconductive layer maintains single-crystal quality, after substitution of nitrogen.
A method of fabricating a compound semiconductor layered structure comprising the steps of:
- epitaxially depositing a first layer comprising a single-crystal compound semiconductor containing a Group V element and no nitrogen onto a substrate;
- epitaxially depositing a second layer comprising a single-crystal containing no nitrogen and a Group V element different from the Group V element contained in the first layer onto the first layer;
- and then
- after the first layer and the second layer are grown in said epitaxially-depositing steps, irradiating a surface of the second layer with a material containing at least nitrogen and substituting only a part of the Group V element in the second layer by nitrogen, wherein the second layer maintains single-crystal quality after substitution of nitrogen, the Group V element contained in the first layer having more difficulty in being substituted by nitrogen than the Group V element contained in the second layer, nitrogen being substituted only for the second layer.
Dependencies are inferred from the claim text.