Semiconductor devices with structures for emitting or detecting light
AssigneeSquidled SAS
InventorsMazid Munshi, Helge Weman, Bjørn-Ove Fimland
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Abstract
The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.
Claims17
A semiconductor device comprising:
- a substrate layer,
- a graphitic layer,
- at least one semiconductor structure grown on the graphitic layer, the at least one semiconductor structure comprising at least:
- a III-V semiconductor n-type doped region,
- a hexagonal Boron-Nitride (hBN) region, wherein
- the hBN region comprises a plurality of hBN layers, at least one of which is undoped and at least one of which is p-type doped;
- and
- wherein the undoped hBN layer forms an interface with the III-V semiconductor n-type doped region;
- wherein the hBN region comprises a passivation layer.
Dependencies are inferred from the claim text.