Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode

An optical device, comprising:

• a plurality of vertical-cavity surface-emitting laser (VCSEL) arrays, the plurality of VCSEL arrays including:
• an n-type substrate layer having a top surface and a bottom surface;
• an n-type metal on the bottom surface of the n-type substrate layer, the n-type metal forming a common anode for the plurality of VCSEL arrays including the VCSEL array;
• an n-type bottom mirror section on the top surface of the n-type substrate layer;
• a first tunnel junction to reverse a carrier type on the n-type bottom mirror section;
• a second tunnel junction, the second tunnel junction being on an n-type top mirror;
• a p-type top contact layer on the second tunnel junction;
• and
• a p-type metal on the p-type top contact layer;
• and
• driver circuitry to provide current to the plurality of VCSEL arrays, the driver circuitry comprising at least one of:
• one or more n-channel metal oxide semiconductor field-effect transistors (MOSFETs), or
• one or more n-p-n bi-polar junction transistors (BJTs).

A method, comprising:

• forming an n-type metal on a first surface of an n-type substrate layer, the n-type metal providing a common anode for a plurality of vertical-cavity surface-emitting laser (VCSEL) arrays;
• forming an n-type bottom mirror section on a second surface of the n-type substrate layer;
• forming a first tunnel junction to reverse a carrier type on the n-type bottom mirror section;
• forming a second tunnel junction on an n-type mirror;
• forming a p-type top contact layer on the second tunnel junction;
• forming a p-type metal on the p-type top contact layer;
• and
• providing current to the plurality of VCSEL arrays via driver circuitry, the driver circuitry comprising at least one of:
• one or more n-channel metal oxide semiconductor field-effect transistors (MOSFETs), or
• one or more n-p-n bi-polar junction transistors (BJTs).