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US 12,424,822 B2Granted
Semiconductor laser diode including multiple active layers and a grating layer
AssigneeVisual Photonics Epitaxy Co., Ltd.
InventorsChien-Hung Pan, Yu-Chung Chin
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Abstract
Provided is a semiconductor laser diode including multiple active layers and a grating layer. The semiconductor laser diode includes two (or more than two) active layers, a grating layer, and a tunnel junction. The grating layer and the tunnel junction are provided between the two active layers. The tunnel junction is electrically connected to the two active layers, and the two active layers share and are optically coupled to the grating layer, thereby improving the external quantum efficiency and slope efficiency of the semiconductor laser diode.
Claims11
A semiconductor laser diode, comprising:
- a substrate;
- a first epitaxial stack structure disposed on the substrate and including a first active layer, wherein the first active layer includes one or a plurality of first quantum well layers, and generates a first optical field distribution;
- a grating layer disposed above the first epitaxial stack structure;
- a second epitaxial stack structure disposed above the grating layer and including a second active layer, wherein the second active layer includes one or a plurality of second quantum well layers, and generates a second optical field distribution;
- and
- a tunnel junction disposed between the first active layer and the second active layer to electrically connect the first active layer and the second active layer in series,
- wherein the grating layer is disposed between the first active layer and the second active layer, and the first optical field distribution and the second optical field distribution are both optically coupled to the grating layer.
4 more elements
Dependencies are inferred from the claim text.