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US 2026/0188980 A1Published application
Vertical light emitting nanorod laser diode and method of thereof
AssigneeIndustrial Cooperation Foundation Jeonbuk National University
InventorYong Ho RA
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Abstract
A vertical light-emitting nanorod laser diode and a method of manufacturing the vertical light-emitting nanorod laser diode are provided, and more specifically, a vertical light-emitting nanorod laser diode can vertically emit light without using a DBR by depositing a nitride-based nanorod LED structure as a thin film on a substrate and using the deposited nanorod LED structure itself as a light reflector for laser oscillation.
Claims7
A vertical light-emitting nanorod laser diode comprising:
- a substrate including a plurality of nanoholes formed on an upper surface of the substrate;
- a plurality of nanorod LED structures, each of the plurality of nanorod LED structures including thin films deposited on top of one another and disposed on each of the plurality of nanoholes to have a vertical length, and the thin films including a lower n-GaN layer, a quantum well active layer, a p-GaN layer, a tunnel junction layer, and an upper n-GaN layer, wherein the quantum well active layer, the p-GaN layer, and the tunnel junction layer are provided between the lower n-GaN layer and the upper n-GaN layer;
- a passivation layer including a passivation material applied on the upper surface of the substrate to have a thickness covering the lower n-GaN layer, the quantum well active layer, the p-GaN layer, the tunnel junction layer, and a lower part of the upper n-GaN layer of each of the plurality of nanorod LED structures;
- a lower metal electrode layer deposited on a lower surface of the substrate;
- and an ohmic metal electrode layer disposed on an upper part of the upper n-GaN layer of each of the nanorod LED structures,
- wherein the tunnel junction layer is formed of one of Al, Au, In, Ga, MoS2, graphene, AlN, InGaN, AlGaN, AlInGaN, and GaN.
3 more elements
A method of manufacturing a vertical light-emitting nanorod laser diode, the method comprising:
- a nanohole patterning step of depositing a mask layer on an upper portion of a substrate, depositing a photoresist on the mask layer, and forming a plurality of nanoholes to have a shape, a size, and a pattern;
- a nanorod forming step of depositing thin films to be stacked on top of one another and to be disposed on each of the plurality of nanoholes to have a length in a vertical direction and forming a plurality of nanorod LED structures, each of the plurality of nanorod LED structures including a lower n-GaN layer, a quantum well active layer, a p-GaN layer, a tunnel junction layer, and an upper n-GaN layer, wherein the quantum well active layer, the p-GaN layer, and the tunnel junction layer are disposed between the lower n-GaN layer and the upper n-GaN layer;
- a passivation layer forming step of forming a passivation layer by applying a passivation material on the upper portion of the substrate to have a thickness covering entirety of the plurality of nanorod LED structures;
- a passivation layer etching step of etching an upper part of the upper n-GaN layer such that the upper part of the upper n-GaN layer is exposed;
- a lower metal electrode layer depositing step of depositing a lower metal electrode layer on a lower surface of the substrate;
- and
- an ohmic metal electrode layer depositing step of placing an ohmic metal electrode on the upper part of the upper n-GaN layer,
- wherein the tunnel junction layer in the nanorod forming step is formed of one of Al, Au, In, Ga, MoS2, graphene, AlN, InGaN, AlGaN, AlInGaN, and GaN.
5 more elements
Dependencies are inferred from the claim text.