H01S 5/347
In aiibvi compounds
Official title: in AIIBVI compounds, e.g. ZnCdSe- laser
H01S5/347 (In aiibvi compounds) appears on 136 US grants and 56 published applications in this corpus.
Search patents in H01S- Granted patents
- 136
- Published applications
- 56
- Assignees
- 68
- Inventors
- 281
- Latest grant
- 1 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 15 | 0 |
| 1995 | 8 | 0 |
| 1996 | 11 | 0 |
| 1997 | 14 | 0 |
| 1998 | 13 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 3 | 3 |
| 2002 | 5 | 0 |
| 2003 | 1 | 2 |
| 2004 | 2 | 4 |
| 2005 | 2 | 5 |
| 2006 | 3 | 1 |
| 2007 | 3 | 3 |
| 2008 | 0 | 7 |
| 2009 | 1 | 2 |
| 2010 | 6 | 4 |
| 2011 | 3 | 1 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 2 | 4 |
| 2015 | 3 | 3 |
| 2016 | 2 | 0 |
| 2017 | 2 | 2 |
| 2018 | 1 | 2 |
| 2019 | 2 | 2 |
| 2020 | 2 | 4 |
| 2021 | 3 | 1 |
| 2022 | 1 | 2 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
| 2025 | 1 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter1 Jul 2025US 12,344,783 B2Fundació Institut De CièNcies FotòNiques
- Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures27 Feb 2024US 11,916,162 B2Wright State University
- Optically cooled platform for thermal management applications31 May 2022US 11,349,279 B2UNM Rainforest Innovations
- Plasmonic quantum well laser30 Mar 2021US 10,965,101 B2International Business Machines Corporation
- Fabrication of ellipsoidal or semi-ellipsoidal semiconductor structures23 Mar 2021US 10,958,040 B1International Business Machines Corporation
- Zinc oxide-based quantum cascade laser element15 Jan 2026US 2026/0018865 A1
- Optical semiconductor device6 Nov 2025US 2025/0343393 A1Furukawa Electric Co., Ltd.
- Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter28 Jul 2022US 2022/0235263 A1Fundació Institut De CièNcies FotòNiques
- Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures20 Jan 2022US 2022/0020896 A1Wright State University
- Fabrication of ellipsoidal or semi-ellipsoidal semiconductor structures18 Mar 2021US 2021/0083453 A1International Business Machines Corporation
Most cited
By later US patents
- Light-emitting semiconductor device462US 5,696,389 AKabushiki Kaisha Toshiba · 1997
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995
- Semiconductor light-emitting device and method for manufacturing the same136US 7,132,691 B1Rohm Co., Ltd. · 2006
- Nanoscale coherent optical components101US 7,254,151 B2President and Fellows of Harvard College · 2007
- Wide band gap semiconductor light emitting devices94US 4,894,832 ANorth American Philips Corporation · 1990