Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures
AssigneeWright State University
InventorsElliott R. Brown, Weidong Zhang, Tyler Growden, Paul Berger
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Abstract
A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.
Claims19
A unipolar-doped light emitting diode or laser diode, comprising:
- a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions;
- wherein the top or bottom regions create light emission by interband tunneling-induced photon emission;
- and wherein the interband tunneling creates a hole on the same side of the heterojunction as electrons are accumulated generating optical emission.
A unipolar-doped light emitting diode or laser diode, comprising:
- a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions;
- and where the top or bottom regions create light emission by interband tunneling-induced photon emission, wherein the interband tunneling creates a hole on the opposed side of the heterojunction as electrons are accumulated, and wherein the holes tunnel through at least one heterojunction and at least one hole recombines with at least one election generating optical emission.
Dependencies are inferred from the claim text.