Fabrication of ellipsoidal or semi-ellipsoidal semiconductor structures

A semiconductor device obtainable by a method comprising:

• providing a semiconductor substrate;
• fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate, the ellipsoidal or semi-ellipsoidal cavity structure encompassing a seed surface of the semiconductor substrate;
• growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate, wherein fabricating the ellipsoidal or semi-ellipsoidal cavity structure comprises:
• depositing a droplet comprising a sacrificial material on the semiconductor substrate, wherein the droplet is an ellipsoidal or semi-ellipsoidal droplet;
• forming a coating layer comprising a coating material on the semiconductor substrate and the droplet;
• and
• selectively removing the sacrificial material of the droplet, thereby exposing the ellipsoidal or semi-ellipsoidal cavity structure.

A semiconductor device, comprising:

• a semiconductor substrate;
• an insulating layer on the semiconductor substrate;
• a hole in the insulating layer, the hole exposing a seed surface of the semiconductor substrate;
• an ellipsoidal or semi-ellipsoidal cavity structure arranged on the insulating layer around the opening;
• and
• an ellipsoidal or semi-ellipsoidal semiconductor structure that has been epitaxially grown from the seed surface of the semiconductor substrate in the ellipsoidal or semi-ellipsoidal cavity structure.