H01S 5/3428
Layer orientation perpendicular to the substrate
Official title: {layer orientation perpendicular to the substrate}
H01S5/3428 (Layer orientation perpendicular to the substrate) appears on 118 US grants and 29 published applications in this corpus.
Search patents in H01S- Granted patents
- 118
- Published applications
- 29
- Assignees
- 63
- Inventors
- 243
- Latest grant
- 22 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 9 | 0 |
| 1989 | 8 | 0 |
| 1990 | 4 | 0 |
| 1991 | 9 | 0 |
| 1992 | 6 | 0 |
| 1993 | 8 | 0 |
| 1994 | 12 | 0 |
| 1995 | 7 | 0 |
| 1996 | 13 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 1 | 2 |
| 2008 | 1 | 1 |
| 2009 | 3 | 3 |
| 2010 | 2 | 1 |
| 2011 | 2 | 1 |
| 2012 | 0 | 3 |
| 2013 | 1 | 1 |
| 2014 | 2 | 2 |
| 2015 | 2 | 0 |
| 2016 | 0 | 2 |
| 2017 | 1 | 0 |
| 2018 | 2 | 2 |
| 2019 | 1 | 1 |
| 2020 | 1 | 2 |
| 2021 | 1 | 1 |
| 2022 | 0 | 2 |
| 2023 | 0 | 1 |
| 2024 | 2 | 1 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device22 Oct 2024US 12,126,142 B2Sony Group Corporation
- Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region16 Jul 2024US 12,040,595 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Plasmonic laser6 Jul 2021US 11,056,856 B2International Business Machines Corporation
- Light emitting apparatus and projector10 Nov 2020US 10,833,484 B2Seiko Epson Corporation
- Nanowire laser structure and fabrication method6 Aug 2019US 10,374,394 B2Technische Universitaet Muenchen
- Laser diodes, leds, and silicon integrated sensors on patterned substrates24 Jul 2025US 2025/0241089 A1
- Laser diodes, leds, and silicon integrated sensors on patterned substrates11 Apr 2024US 2024/0120436 A1
- Optoelectronic device comprising a semiconductor layer based on gesn having a single-crystal portion with a direct band structure and an underlying barrier region15 Jun 2023US 2023/0187567 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Laser diodes, leds, and silicon integrated sensors on patterned substrates20 Oct 2022US 2022/0336695 A1
- Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device6 Jan 2022US 2022/0006265 A1Sony Group Corporation
Most cited
By later US patents
- Integrated thermal ink jet printhead and method of manufacture112US 4,847,630 AHewlett-Packard Company · 1989
- Color display/detector84US 5,583,351 ASharp Kabushiki Kaisha · 1996
- Integration of transistors with vertical cavity surface emitting lasers82US 5,283,447 ABandgap Technology Corporation · 1994
- Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material69US 7,521,274 B2Stc. Unm · 2009
- Ion-implanted planar-buried-heterostructure diode laser68US 5,048,038 AThe United States of America as represented by the United States Department of Energy · 1991