Nanowire laser structure and fabrication method
AssigneeTechnische Universitaet Muenchen
InventorsBenedikt Mayer, Gregor Koblmueller, Jonathan Finley, Johannes Klicpera, Gerhard Abstreiter
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Abstract
A core-shell nanowire laser structure comprises a substrate (12), an elongated support element (14) extending from the substrate, the support element having a first diameter, and an elongated body element (16) extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.
Claims13
A nanowire laser structure, comprising:
- a substrate;
- an elongated support element extending from said substrate, said support element having a first diameter;
- and
- an elongated body element extending on and/or around said support element, said body element having a second diameter at least two times larger than said first diameter;
- wherein said body element is spaced apart from said substrate;
- said nanowire laser structure further comprising a pn junction or a pin junction;
- wherein said nanowire laser structure is adapted to emit a laser signal at a wavelength λ,
- wherein said first diameter of said support element is smaller than λ/(2n), wherein n denotes an index of refraction of said support element;
- and
- wherein said second diameter of said body element is no smaller than λ/m, wherein m denotes an index of refraction of said body element.
A laser array comprising:
- a plurality of nanowire laser structures, each nanowire laser structure of said plurality of nanowire laser structures comprising:
- an elongated support element extending from a substrate, said support element having a first diameter;
- and
- an elongated body element extending on and/or around said support element, said body element having a second diameter at least two times larger than said first diameter;
- wherein said body element is spaced apart from said substrate;
- each said nanowire laser structure further comprising a pn junction or a pin junction;
- wherein said nanowire laser structure is adapted to emit a laser signal at a wavelength λ,
- wherein said first diameter of said support element is smaller than λ/(2n), wherein n denotes an index of refraction of said support element;
- wherein said second diameter of said body element is no smaller than λ/m, wherein m denotes an index of refraction of said body element;
- and
- wherein said substrate of each nanowire laser structure is a common substrate of said plurality of nanowire laser structures.
A method for forming a nanowire laser structure, comprising:
- forming a first reflective layer on a substrate layer;
- forming a hole in said first reflective layer, said hole extending to said substrate layer;
- and
- growing a nanowire laser structure in said hole;
- wherein growing said nanowire laser structure comprises growing a support element in said hole through said first reflective layer at a first diameter, and extending said support element above said first reflective layer, and growing a body element around at least a portion of said support element that extends above said first reflective layer, said body element having a second diameter at least two times larger than said first diameter;
- doping said support element and/or said body element to form a pn junction or a pin junction;
- wherein said nanowire laser structure is adapted to emit a laser signal at a wavelength λ, wherein said first diameter of said support element is smaller than λ/(2n), wherein n denotes an index of refraction of said support element;
- and
- wherein said second diameter of said body element is no smaller than λ/m, wherein m denotes an index of refraction of said body element.
Dependencies are inferred from the claim text.