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US 5,583,351 AGranted
Color display/detector
AssigneeSharp Kabushiki Kaisha
InventorsRobert G. W. Brown, Stephen P. Najda
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AssigneeSharp Kabushiki Kaisha
InventorsRobert G. W. Brown, Stephen P. Najda
Estimating the term…
A color semiconductor display device in which optoelectronic elements capable of emitting/absorbing light of different predetermined wavelengths in the visible wavelength range (e.g. red, green, blue) are formed on a common substrate and comprise similar alloy compositions which are lattice matched to the substrate material. The alloy is preferably a III-V nitride alloy lattice matched to Si or GaP substrate material. In the disclosed embodiment, a color display device comprises a silicon or GaP substrate with an array of pixels, each being formed by a group of three (red, green, blue) color sub-pixels provided on the substrate. The pixels are formed of InAINSb alloy, with a quantum well regions of InNSb and barrier regions of AINSb, or are formed of AIGaAsSbN alloy, with quantum well regions of GaAsN and barrier regions of AINSb. Tuning of the wavelength emission/absorption characteristics of the sub-pixels is by doping of the quantum well material with aluminum and/or by quantum confinement.
A color semiconductor display/detector having a plurality of optoelectronic elements, said plurality including a first element and a second element, said first and second elements being capable of emitting/absorbing light having respective different predetermined wavelengths in the range corresponding to visible light, wherein said first and second optoelectronic elements are formed on a common substrate, and comprise III-V nitride alloy compositions, said compositions being substantially lattice matched to said common substrate.
An optoelectronic element comprising a III-V nitride alloy capable of being substantially lattice matched to at least one of Si and GaP, and of being selectively adapted to emit/absorb light at a desired wavelength in the visible red to ultra-violet region of the electromagnetic spectrum, said element having an active region comprising InNSb.
An optoelectronic element comprising a III-V nitride alloy capable of being substantially lattice matched to at least one of Si and GaP, and of being selectively adapted to emit/absorb light at a desired wavelength in the visible red to ultra-violet region of the electromagnetic spectrum, said element having an active region comprising an active quantum well region of GaAsN and barrier regions of AlNSb.
A nitride alloy comprising InN.sub.1-y Sb.sub.y where y lies in the range 0.32.ltoreq.y.ltoreq.0.38.
A nitride alloy comprising AlN.sub.1-x Sb.sub.x where x lies in the range 0.57.ltoreq.x.ltoreq.0.63.
A blue light emitting/absorbing optoelectronic element comprising a III-V nitride alloy capable of being substantially lattice matched to at least one of Si and GaP, said III-V nitride alloy comprising one of InAlNSb and AlGaAsSbN.
A full color semiconductor display device comprising a single substrate and an array of electroluminescent light emitting elements, formed on said single substrate, wherein the materials forming said elements are substantially lattice matched to the crystal structure of the substrate and wherein said array comprises red, green and blue electroluminescent elements formed of substantially similar III-V nitride alloy compositions tuned for their respective emission wavelengths by at least one of quantum confinement incorporation and by doping variation.
Dependencies are inferred from the claim text.