H01S 5/3403
Having a strained layer structure in which the strain performs a special
Official title: {having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation}
H01S5/3403 (Having a strained layer structure in which the strain performs a special) appears on 456 US grants and 320 published applications in this corpus.
Search patents in H01S- Granted patents
- 456
- Published applications
- 320
- Assignees
- 195
- Inventors
- 829
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 9 | 0 |
| 1992 | 8 | 0 |
| 1993 | 6 | 0 |
| 1994 | 14 | 0 |
| 1995 | 17 | 0 |
| 1996 | 25 | 0 |
| 1997 | 15 | 0 |
| 1998 | 27 | 0 |
| 1999 | 18 | 0 |
| 2000 | 17 | 0 |
| 2001 | 9 | 4 |
| 2002 | 11 | 12 |
| 2003 | 17 | 20 |
| 2004 | 18 | 21 |
| 2005 | 14 | 34 |
| 2006 | 18 | 13 |
| 2007 | 18 | 18 |
| 2008 | 14 | 11 |
| 2009 | 10 | 18 |
| 2010 | 17 | 15 |
| 2011 | 11 | 19 |
| 2012 | 10 | 14 |
| 2013 | 22 | 19 |
| 2014 | 21 | 8 |
| 2015 | 14 | 6 |
| 2016 | 6 | 7 |
| 2017 | 8 | 5 |
| 2018 | 8 | 14 |
| 2019 | 11 | 7 |
| 2020 | 4 | 9 |
| 2021 | 10 | 12 |
| 2022 | 2 | 6 |
| 2023 | 11 | 11 |
| 2024 | 4 | 6 |
| 2025 | 6 | 5 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Broadened spectrum laser diode for display device29 Sep 2026US 12,749,869 B2Microsoft Technology Licensing, LLC
- Reducing auger recombination in semiconductor optical devices9 Jun 2026US 12,651,890 B2University of Surrey
- Strain-engineered cladding layer for optimized active region strain and improved laser diode performance19 May 2026US 12,633,725 B2nLIGHT, Inc.
- Ridge type semiconductor optical device31 Mar 2026US 12,592,545 B2LumentumRadiant GmbH
- Laser element16 Dec 2025US 12,500,396 B2Sony Group Corporation
- Optical semiconductor device6 Aug 2026US 2026/0229850 A1Lumentum Operations LLC
- Patterned embedding on narrow stripe single mode transverse lasers11 Jun 2026US 2026/0163334 A1II-Vi Delaware, Inc.
- Surface emitting laser11 Jun 2026US 2026/0163336 A1Sony Group Corporation
- Laser diodes and strain compensated quantum dot layers4 Jun 2026US 2026/0155630 A1II-Vi Delaware, Inc.
- Multiple quantum well structure, semiconductor laser and manufacturing method for multiple quantum well structure7 May 2026US 2026/0128571 A1Nippon Telegraph and Telephone Corporation
Most cited
By later US patents
- Nitride semiconductor device200US 5,959,307 ANichia Chemical Industries, Ltd. · 1999
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995
- Silicon-based strain-symmetrized GE-SI quantum lasers135US 6,154,475 AThe United States of America as represented by the Secretary of the Air Force · 2000
- Light emitting devices with layered III-V semiconductor structures124US 6,207,973 B1Ricoh Company, Ltd. · 2001
- Heterostructure laser with lattice mismatch96US 5,048,036 ASpectra Diode Laboratories, Inc. · 1991