Laser element

A laser element, comprising:

• a first semiconductor layer that includes a group iii nitride semiconductor having a first conductive type;
• a second semiconductor layer that includes the group iii nitride semiconductor having a second conductive type;
• an active layer that includes the group iii nitride semiconductor, wherein the active layer is between the first semiconductor layer and the second semiconductor layer;
• and
• an electron barrier layer between the active layer and the second semiconductor layer, wherein
• the second semiconductor layer includes a first cladding layer and a second cladding layer,
• the first cladding layer is between the second cladding layer and the electron barrier layer,
• each of the electron barrier layer, the first cladding layer, and the second cladding layer includes the group iii nitride semiconductor that includes aluminum (Al),
• the first cladding layer has a composition ratio of the Al larger than a composition ratio of the Al of the second cladding layer,
• the electron barrier layer has a composition ratio of the Al larger than the composition ratio of the Al of the first cladding layer,
• the electron barrier layer has a recessed and projecting shape on a surface of the electron barrier layer,
• the surface of the electron barrier layer is on a side of the second semiconductor layer,
• the recessed and projecting shape includes a projecting portion and a recessed portion,
• in a direction perpendicular to a layer surface direction of the laser element, the recessed and projecting shape has a height difference between the projecting portion and the recessed portion, and
• the height difference is 2 nm or more and less than 10 nm.