Nitride semiconductor device
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
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Abstract
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
Claims38
A nitride semiconductor device having a nitride semiconductor layer structure comprising:
- an active layer of a quantum well structure which has a first surface and a second surface and which comprises an indium-containing nitride semiconductor;
- a first nitride semiconductor layer which is formed to adjoin the first surface of the active layer and has a band gap energy larger than that of the active layer;
- a second nitride semiconductor layer which is non-active and is formed on the first surface side of the active layer at a location more distant from the active layer relative to the first nitride semiconductor layer and which has a band gap energy smaller than that of the first nitride semiconductor layer;
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- a third nitride semiconductor layer which is formed on the first surface side of the active layer at a location more distant from the active layer relative to the second nitride semiconductor layer and which has a band gap energy larger than that of the second nitride semiconductor layer.
A nitride semiconductor device comprising:
- an active layer of a quantum well structure which has a first surface and a second surface and which comprises an indium-containing nitride semiconductor,
- a first layer which is formed to adjoin the second surface of the active layer and which comprises a nitride semiconductor and which has a band gap energy larger than that of the active layer;
- a second layer which is formed on the second surface side of the active layer at a location more distant from the active layer relative to the first layer, which comprises an n-type nitride semiconductor, and which has a band gap energy smaller than that of the first layer,
- a third layer which is formed on the second surface side of the active layer at a location more distant from the active layer relative to the second layer, which comprises an n-type nitride semiconductor, and which has a band gap energy larger than that of the second layer.
A nitride semiconductor device comprising:
- an active layer of a quantum well structure which has a first surface and a second surface and which comprises an indium-containing nitride semiconductor;
- a first nitride semiconductor layer structure comprising a first p-side nitride semiconductor layer which is formed to adjoin the first surface of the active layer and has a band gap energy larger than that of the active layer, a second p-side nitride semiconductor layer which is formed on the first surface side of the active layer at a location more distant from the active layer relative to the first p-side nitride semiconductor layer and which has a band gap energy smaller than that of the first p-side nitride semiconductor layer, and a third p-side nitride semiconductor layer which is formed on the first surface side of the active layer at a location more distant from the active layer relative to the second p-side nitride semiconductor layer and which has a band gap energy larger than that of the second p-side nitride semiconductor layer;
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- a second nitride semiconductor layer structure comprising a first n-side nitride semiconductor layer which is formed to adjoin the second surface of the active layer and has a band gap energy larger than that of the active layer, a second n-side nitride semiconductor layer which is formed on the second surface side of the active layer at a location more distant from the active layer relative to the first n-side nitride semiconductor layer and which has a band gap energy smaller than that of the first n-side nitride semiconductor layer, and a third n-side nitride semiconductor layer which is formed on the second surface side of the active layer at a location more distant from the active layer relative to the second n-side nitride semiconductor layer and which has a band gap energy larger than that of the second n-side nitride semiconductor layer.
A nitride semiconductor device having, on a substrate, a layer structure comprising an n-type contact layer, a first n-type clad layer which comprises an aluminum-containing nitride semiconductor, a second n-type clad layer which comprises an indium-containing nitride semiconductor or GaN, an active layer of a quantum well structure which comprises an indium-containing nitride semiconductor, a first p-type clad layer which comprises an aluminum-containing nitride semiconductor, a second p-type clad layer which comprises an indium-containing nitride or GaN, a third p-type clad layer which comprises an aluminum-containing nitride semiconductor, and a p-type contact layer.
Dependencies are inferred from the claim text.