Ridge type semiconductor optical device

A ridge type semiconductor optical device comprising:

• a mesa stripe structure extending in a first direction;
• a laminate including:
• an active layer or an absorption layer,
• a first isolation groove extending in the first direction to separate the active layer or the absorption layer,
• a first planar region adjacent to a first side of the first isolation groove and adjacent to a first side of the mesa stripe structure,
• a second planar region adjacent to a second side of the first isolation groove,
• wherein the first isolation groove has a first wall surface adjacent to the first planar region, a second wall surface adjacent to the second planar region, and
• a bottom surface between the first wall surface and the second wall surface,
• a second isolation groove,
• a third planar region adjacent to a second side of the mesa stripe structure and adjacent to a first side of the second isolation groove, and
• a fourth planar region adjacent to a second side of the second isolation groove,
• wherein the second isolation groove has a third wall surface adjacent to the third planar region, a fourth wall surface adjacent to the fourth planar region, and a bottom surface between the third wall surface and the fourth wall surface;
• a bank structure adjacent to the second planar region and extending in the first direction;
• and
• an electrode pattern including:
• a ridge electrode on a top of the mesa stripe structure, on the first side of the mesa stripe structure, and on the second side of the mesa stripe structure,
• a pad electrode on a top of the bank structure, and
• a connection electrode connecting the ridge electrode and the pad electrode,
• wherein the ridge electrode, on the first side of the mesa stripe structure, extends on to the first planar region along a second direction orthogonal to the first direction,
• wherein the ridge electrode, on the second side of the mesa stripe structure, extends from the second side of the mesa stripe structure on the third planar region along a third direction opposite to the second direction,
• wherein at least a portion of the ridge electrode, on the second side of the mesa stripe structure, extends on to the third wall surface,
• wherein the electrode pattern, on the second side of the mesa stripe structure, does not extend beyond the fourth wall surface, and
• wherein the connection electrode has a width in the first direction that is less than a width of the ridge electrode and a width of the pad electrode.

A ridge type semiconductor optical device comprising:

• a mesa stripe structure extending in a first direction;
• a laminate including:
• an active layer or an absorption layer,
• a first isolation groove extending in the first direction to separate the active layer or the absorption layer,
• a first planar region adjacent to a first side of the first isolation groove and adjacent to a first side of the mesa stripe structure,
• a second planar region adjacent to a second side of the first isolation groove,
• wherein the first isolation groove has a first wall surface adjacent to the first planar region, a second wall surface adjacent to the second planar region, and
• a bottom surface between the first wall surface and the second wall surface,
• a second isolation groove,
• a third planar region adjacent to a second side of the mesa stripe structure and adjacent to a first side of the second isolation groove, and
• a fourth planar region adjacent to a second side of the second isolation groove,
• wherein the second isolation groove has a third wall surface adjacent to the third planar region, a fourth wall surface adjacent to the fourth planar region, and a bottom surface between the third wall surface and the fourth wall surface;
• a bank structure adjacent to the second planar region and extending in the first direction;
• and
• an electrode pattern including:
• a ridge electrode on a top of the mesa stripe structure, on the first side of the mesa stripe structure, and on the second side of the mesa stripe structure,
• a pad electrode on a top of the bank structure, and
• a connection electrode connecting the ridge electrode and the pad electrode,
• wherein the ridge electrode, on the first side of the mesa stripe structure, extends on to the first planar region along a second direction orthogonal to the first direction and on to the bottom surface of the first isolation groove, and does not extend on to the second wall surface,
• wherein the ridge electrode, on the second side of the mesa stripe structure, extends from the second side of the mesa stripe structure on the third planar region along a third direction opposite to the second direction,
• wherein at least a portion of the ridge electrode, on the second side of the mesa stripe structure, extends on to the third wall surface,
• wherein the electrode pattern, on the second side of the mesa stripe structure, does not extend on to the fourth wall surface, and
• wherein the connection electrode has a width in the first direction that is less than a width of the ridge electrode and a width of the pad electrode.