H01S 5/3406
Including strain compensation
Official title: {including strain compensation}
H01S5/3406 (Including strain compensation) appears on 174 US grants and 130 published applications in this corpus.
Search patents in H01S- Granted patents
- 174
- Published applications
- 130
- Assignees
- 107
- Inventors
- 373
- Latest grant
- 16 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 1 | 0 |
| 1994 | 6 | 0 |
| 1995 | 4 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 9 | 0 |
| 2000 | 5 | 0 |
| 2001 | 2 | 1 |
| 2002 | 4 | 3 |
| 2003 | 6 | 5 |
| 2004 | 4 | 7 |
| 2005 | 6 | 13 |
| 2006 | 1 | 5 |
| 2007 | 7 | 11 |
| 2008 | 9 | 6 |
| 2009 | 7 | 10 |
| 2010 | 11 | 4 |
| 2011 | 7 | 9 |
| 2012 | 3 | 5 |
| 2013 | 5 | 6 |
| 2014 | 9 | 0 |
| 2015 | 5 | 4 |
| 2016 | 3 | 1 |
| 2017 | 3 | 2 |
| 2018 | 4 | 8 |
| 2019 | 5 | 2 |
| 2020 | 2 | 6 |
| 2021 | 6 | 8 |
| 2022 | 0 | 1 |
| 2023 | 8 | 5 |
| 2024 | 3 | 2 |
| 2025 | 4 | 3 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Laser element16 Dec 2025US 12,500,396 B2Sony Group Corporation
- O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method22 Jul 2025US 12,368,282 B2FuJian Z.K. Litecore,Ltd.
- Quantum dot lasers and methods for making the same8 Jul 2025US 12,355,213 B2The Regents of the University of California
- Wavelength-variable laser10 Jun 2025US 12,327,983 B2Furukawa Electric Co., Ltd.
- Vertical cavity surface emitting device with a buried index guiding current confinement layer5 Nov 2024US 12,136,798 B2The Regents of the University of California
- Optical semiconductor device6 Aug 2026US 2026/0229850 A1Lumentum Operations LLC
- Surface emitting laser11 Jun 2026US 2026/0163336 A1Sony Group Corporation
- Laser diodes and strain compensated quantum dot layers4 Jun 2026US 2026/0155630 A1II-Vi Delaware, Inc.
- Wavelength-variable laser4 Sep 2025US 2025/0279629 A1Furukawa Electric Co., Ltd.
- Surface-emitting laser device, detection apparatus, and mobile object12 Jun 2025US 2025/0192522 A1
Most cited
By later US patents
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995
- Strained quantum well structure75US 5,671,242 AMitsubishi Denki Kabushiki Kaisha · 1997
- Extended wavelength strained layer lasers having strain compensated layers53US 5,825,796 APicolight Incorporated · 1998
- Extended wavelength strained layer lasers having nitrogen disposed therein52US 5,719,894 APicolight Incorporated · 1998
- Semiconductor light emitter47US 6,927,412 B2Ricoh Company, Ltd. · 2005