Quantum dot lasers and methods for making the same
AssigneeThe Regents of the University of California
InventorsJohn E. Bowers, Arthur Gossard, Daehwan Jung, Kunal Mukherjee, Justin Norman, Jennifer Selvidge
Life of this patent
Estimating the term…
Abstract
A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.
Claims11
A quantum dot (QD) laser comprising:
- a silicon substrate;
- and
- an active region epitaxially deposited on the silicon substrate, wherein the active region is comprised of III-V type semiconductor material that results in one or more misfit dislocations located at a boundary between the silicon substrate and the III-V type semiconductor material, wherein the active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers, wherein a net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser, wherein each barrier layer provides a net tensile strain that offsets the net compressive strain associated with the plurality of QD layers to maintain the net strain below the maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.
A quantum dot (QD) laser comprising:
- a semiconductor substrate;
- and
- an active region epitaxially deposited on the semiconductor substrate, wherein the active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers, wherein each barrier layer provides a strain that at least partially offsets a strain introduced by each QD layer, wherein the active region includes a plurality of threading dislocations extending from one or more misfit dislocations formed between the semiconductor substrate and the active region, wherein the strain provided by the barrier layer that at least partially offsets the strain introduced by each QD layer prevents formation of misfit locations within the active region.
Dependencies are inferred from the claim text.