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US 6,927,412 B2Granted
Semiconductor light emitter
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Shunichi Sato, Morimasa Kaminishi
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Abstract
A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.
Claims7
A semiconductor light emitter, comprising:
- a quantum well active layer which includes nitrogen and at least one other Group-V element;
- and
- barrier layers which are provided alongside said quantum well active layer, wherein said quantum well active layer and said barrier layers together constitute an active layer,
- wherein said barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of said quantum well active layer.
1 more element
Dependencies are inferred from the claim text.