Optical semiconductor device
AssigneeLumentum Operations LLC
InventorAtsushi NAKAMURA
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Abstract
An optical semiconductor device includes a multiple-quantum well layer which is formed from one of InGaAsP or InGaAs and which includes a well layer and a barrier layer; an electron barrier layer formed from InAlAs; a spacer layer which is placed between the multiple-quantum well layer and the electron barrier layer, and which is formed from InP; and an optical confinement layer placed between the multiple-quantum well layer and the spacer layer. The electron barrier layer has a highest energy level that is approximately equal to or more than a highest energy level of the optical confinement layer in a valence band.
Claims20
An optical semiconductor device, comprising:
- a multiple-quantum well layer which is formed from one of InGaAsP or InGaAs and which includes a well layer and a barrier layer;
- an electron barrier layer formed from InAlAs;
- a spacer layer which is placed between the multiple-quantum well layer and the electron barrier layer, and which is formed from InP;
- and
- an optical confinement layer placed between the multiple-quantum well layer and the spacer layer,
- wherein the electron barrier layer has a highest energy level that is approximately equal to or more than a highest energy level of the optical confinement layer in a valence band.
Dependencies are inferred from the claim text.