Light emitting devices with layered III-V semiconductor structures
AssigneeRicoh Company, Ltd.
InventorsShunichi Sato, Takashi Takahashi, Naoto Jikutani
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Abstract
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.
Claims41
A semiconductor light emitting device comprising:
- a semiconductor substrate,
- an active region comprising a strained quantum well layer, and
- a cladding layer for confining carriers and light emissions,
- wherein an amount of lattice strains in said quantum well layer is in excess of 2% against either said semiconductor substrate or said cladding layer.
A semiconductor light emitting device comprising:
- a semiconductor substrate,
- an active region comprising a strained quantum well layer, and
- a cladding layer for confining carriers and light emissions,
- wherein a thickness of said quantum well layer is in excess of critical thickness calculated by a relationship of Matthews and Blakeslee.
A semiconductor light emitting device comprising:
- a semiconductor substrate, an active layer, and a cladding layer for confining carriers and light emissions,
- wherein said active layer includes a III-V semiconductor alloy containing at least Al as one group-III element and both N and As as group-V elements.
A method of fabricating a light emitting device comprising III-V alloy semiconductor layers,
- said method comprising the step of depositing said III-V alloy semiconductor layers by metal organic chemical vapor deposition (MOCVD) using organometallic compounds selected from the group consisting of trimethylaluminum and trimethylaluminum, as the Al source.
Dependencies are inferred from the claim text.