H01S 5/343
In aiiibv compounds
Official title: in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/343 (In aiiibv compounds) appears on 3,984 US grants and 4,163 published applications in this corpus.
Search patents in H01S- Granted patents
- 3,984
- Published applications
- 4,163
- Assignees
- 742
- Inventors
- 4,820
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 9 | 0 |
| 1987 | 7 | 0 |
| 1988 | 18 | 0 |
| 1989 | 26 | 0 |
| 1990 | 18 | 0 |
| 1991 | 27 | 0 |
| 1992 | 20 | 0 |
| 1993 | 39 | 0 |
| 1994 | 37 | 0 |
| 1995 | 40 | 0 |
| 1996 | 59 | 0 |
| 1997 | 44 | 0 |
| 1998 | 97 | 0 |
| 1999 | 74 | 0 |
| 2000 | 58 | 0 |
| 2001 | 60 | 26 |
| 2002 | 63 | 111 |
| 2003 | 105 | 123 |
| 2004 | 101 | 156 |
| 2005 | 114 | 225 |
| 2006 | 144 | 184 |
| 2007 | 101 | 214 |
| 2008 | 120 | 213 |
| 2009 | 163 | 208 |
| 2010 | 226 | 215 |
| 2011 | 171 | 194 |
| 2012 | 164 | 163 |
| 2013 | 142 | 146 |
| 2014 | 156 | 121 |
| 2015 | 169 | 163 |
| 2016 | 142 | 129 |
| 2017 | 143 | 139 |
| 2018 | 137 | 148 |
| 2019 | 158 | 168 |
| 2020 | 148 | 210 |
| 2021 | 148 | 201 |
| 2022 | 111 | 188 |
| 2023 | 127 | 158 |
| 2024 | 113 | 147 |
| 2025 | 108 | 107 |
| 2026 | 71 | 106 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01S 5/34333With a well layer based on gan or gap1,753
- H01S 5/34313With a well layer having only as as v-compound997
- H01S 5/34306Emitting light at a wavelength longer than 1000nm817
- H01S 5/34346Characterised by the materials of the barrier layers479
- H01S 5/34326With a well layer based on ingap402
- H01S 5/3434With a well layer comprising at least both as and p as302
Recent patents
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- Multi-cavity cascaded coupled vertical-cavity surface-emitting laser and manufacture method thereof1 Oct 2026US 2026/0302730 A1University of Electronic Science and Technology of China
- Quantum cascade laser device and method for manufacturing quantum cascade laser device1 Oct 2026US 2026/0302731 A1Mitsubishi Electric Corporation
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- Semiconductor stack and optical semiconductor device1 Oct 2026US 2026/0302734 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Optical systems fabricated by printing-based assembly564US 7,972,875 B2The Board of Trustees of the University of Illinois · 2011
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997