Semiconductor stack and optical semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorKenshi TAKADA
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Abstract
A semiconductor stack includes a first p-type semiconductor layer formed of a III-V group compound semiconductor and having a p-type conductivity and a first n-type semiconductor layer formed of a III-V group compound semiconductor and having an n-type conductivity, the first n-type semiconductor layer being stacked on the first p-type semiconductor layer so as to be in contact with the first p-type semiconductor layer. The first p-type semiconductor layer contains carbon as an acceptor. In the first n-type semiconductor layer, carbon functions as a donor.
Claims11
A semiconductor stack comprising:
- a first p-type semiconductor layer formed of a III-V group compound semiconductor and having a p-type conductivity;
- and
- a first n-type semiconductor layer formed of a III-V group compound semiconductor and having an n-type conductivity, the first n-type semiconductor layer being stacked on the first p-type semiconductor layer so as to be in contact with the first p-type semiconductor layer,
- wherein the first p-type semiconductor layer contains carbon as an acceptor, and
- in the first n-type semiconductor layer, carbon functions as a donor.
A semiconductor stack comprising:
- a first p-type semiconductor layer formed of a III-V group compound semiconductor and having a p-type conductivity;
- and
- a first n-type semiconductor layer formed of a III-V group compound semiconductor and having an n-type conductivity, the first n-type semiconductor layer being stacked on the first p-type semiconductor layer so as to be in contact with the first p-type semiconductor layer,
- wherein the first p-type semiconductor layer contains carbon as an acceptor, and
- the first n-type semiconductor layer is formed of In1−xGaxAsyP1−y in which inequalities 0<x<0.3 and 0<y<1 are satisfied, and contains carbon.
Dependencies are inferred from the claim text.