Light-emitting semiconductor element and method of manufacturing same

A method of manufacturing a light-emitting semiconductor element comprising:

• forming a first semiconductor layer containing an n-type impurity;
• forming a compositionally graded layer containing the n-type impurity, a band gap energy in the compositionally graded layer decreasing as a distance from the first semiconductor layer increases;
• and
• a process of forming a second semiconductor layer containing the n-type impurity, a band gap energy in the second semiconductor layer being lower than a band gap energy of the first semiconductor layer,
• the forming of the first semiconductor layer, the forming of the compositionally graded layer, and the forming of the second semiconductor layer being performed in this order, wherein
• the forming of the compositionally graded layer includes doping at least a portion of the compositionally graded layer with the n-type impurity at a first concentration,
• the forming of the second semiconductor layer includes doping at least a portion of the second semiconductor layer with the n-type impurity at a second concentration,
• at least one of the forming of the compositionally graded layer and the forming of the second semiconductor layer includes doping at least one of the compositionally graded layer and the second semiconductor layer with the n-type impurity at a third concentration that is higher than the first concentration and the second concentration.