Manufacturing method of vertical cavity surface emitting laser

A manufacturing method of a vertical cavity surface emitting laser, wherein the vertical cavity surface emitting laser comprises a first reflector, a first semiconductor layer, an active layer, a second semiconductor layer, an oxide layer, and a second reflector sequentially stacked;

• wherein a conductivity type of the first semiconductor layer is opposite to a conductivity type of the second semiconductor layer;
• the oxide layer comprises a light transmitting region and a light shielding region, and the light shielding region surrounds the light transmitting region;
• the manufacturing method comprises:
• sequentially forming the first reflector, the first semiconductor layer, the active layer, and a second semiconductor material layer on a substrate;
• and
• planarizing a first surface of the second semiconductor material layer away from the substrate to obtain the second semiconductor layer, wherein the first surface after planarization becomes a second contact surface between the second semiconductor layer and the second reflector;
• wherein a material of the second semiconductor layer comprises a group III-V compound;
• and
• wherein each cavity length at each position of a cavity resonator between the first reflector and the second reflector is the same.