H01S 5/34333
With a well layer based on gan or gap
Official title: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
H01S5/34333 (With a well layer based on gan or gap) appears on 1,753 US grants and 1,962 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,753
- Published applications
- 1,962
- Assignees
- 322
- Inventors
- 1,911
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 16 | 0 |
| 1999 | 7 | 0 |
| 2000 | 17 | 0 |
| 2001 | 25 | 14 |
| 2002 | 31 | 50 |
| 2003 | 45 | 54 |
| 2004 | 52 | 59 |
| 2005 | 52 | 73 |
| 2006 | 61 | 83 |
| 2007 | 34 | 93 |
| 2008 | 48 | 119 |
| 2009 | 74 | 113 |
| 2010 | 112 | 127 |
| 2011 | 105 | 142 |
| 2012 | 104 | 111 |
| 2013 | 94 | 77 |
| 2014 | 94 | 63 |
| 2015 | 102 | 79 |
| 2016 | 76 | 52 |
| 2017 | 70 | 54 |
| 2018 | 64 | 59 |
| 2019 | 69 | 73 |
| 2020 | 79 | 89 |
| 2021 | 66 | 88 |
| 2022 | 55 | 81 |
| 2023 | 54 | 67 |
| 2024 | 57 | 56 |
| 2025 | 41 | 55 |
| 2026 | 33 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
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- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Selfluminous display device having light emission sources having substantially non-overlapping spectra levels276US 6,222,203 B1Sony Corporation · 2001
- Semiconductor substrate, semiconductor device and method of manufacturing the same275US 6,069,394 AMatsushita Electronics Corporation · 2000