Back to results
US 2026/0261098 A1Published application
Spontaneous and stimulated emission devices based on relaxed iii-nitride materials
AssigneeOpnovix Corp.
InventorsMichael R. KRAMES, Jun Wang, Nicolas Grandjean, Yao Chen, Jean-Francois Carlin, Etienne Giraud
Life of this patent
Estimating the term…
Abstract
Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 nm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.
Claims28
An edge-emitting laser diode (EELD) device, wherein the EELD device comprises:
- a III-nitride layer;
- a relaxed In-containing III-nitride layer overlying the III nitride layer and comprising a relaxed In-containing III-nitride surface, wherein the relaxed In-containing III-nitride layer comprises a first InN mole fraction that is greater than 0;
- a first cladding layer overlying the relaxed In-containing III-nitride layer;
- an active region overlying the first cladding layer;
- and
- a second cladding layer overlying the active region, wherein
- the first cladding layer, the active region, and the second cladding layer comprise an In-containing III-nitride material;
- and
- the first cladding layer, the active region, and the second cladding layer are lattice matched to the relaxed In-containing III-nitride layer,
- wherein the relaxed In-containing III-nitride layer is characterized by a single-phase gallium-polar (0001) orientation and a substantially relaxed in-plane a-lattice parameter.
7 more elements
A multi-wavelength EELD comprising:
- a first III-nitride layer;
- a first EELD comprising a first active region comprising an In-containing III-nitride layer lattice-matched to the first III-nitride layer;
- a relaxed In-containing III-nitride layer ovelying the first active region;
- and
- a second EELD overlying the relaxed In-containing III-nitride layer wherein the second EELD comprises a second active region comprising an In-containing III-nitride layer lattice-matched to the relaxed In-containing III-nitride layer;
- wherein the first active region is configured to emit electromagnetic radiation within a first wavelength range, and the second active region is configured to emit electromagnetic radiation within a second wavelength range;
- and
- wherein the relaxed In-containing III-nitride layer has a relaxed surface characterized by a single-phase gallium-polar (0001) orientation and a substantially relaxed in-plane a-lattice parameter.
5 more elements
A monolithic multi-wavelength edge-emitting laser diode system, comprising:
- a III-nitride base layer;
- a first EELD overlying a first portion of the III-nitride base layer, wherein the first EELD comprises a first relaxed In-containing III-nitride layer and a first active region comprising an In-containing III-nitride material and lattice matched to the first relaxed In-containing III-nitride layer;
- and
- a second EELD overlying a second portion of the III-nitride base layer, wherein the second EELD comprises a second active region configured to emit radiation within a wavelength range different from that of the first active region;
- wherein the first relaxed In-containing III-nitride layer has an InN mole fraction greater than 0 and a single-phase gallium-polar (0001) orientation and a substantially relaxed in-plane a-lattice parameter.
2 more elements
Dependencies are inferred from the claim text.