Vertical cavity light-emitting element

A vertical cavity light-emitting element comprising:

• a first reflective mirror;
• a first n-type semiconductor layer formed on the first reflective mirror;
• an active layer made of multiple quantum wells formed on the first n-type semiconductor layer;
• a last barrier layer formed on a last quantum well of the active layer;
• an electron blocking layer made of AlGaN formed on the last barrier layer;
• a p-type semiconductor layer formed on the electron blocking layer;
• a tunnel junction layer as a current confinement layer formed on the p-type semiconductor layer;
• a second n-type semiconductor layer formed by embedding the tunnel junction layer;
• and
• a second reflective mirror formed on the second n-type semiconductor layer, wherein a count of anti-nodes and a count of nodes of a standing wave by emission from the active layer contained in the electron blocking layer and the p-type semiconductor layer are each 0 or 1,
• the active layer and the last barrier layer satisfy
• [
• Math
• .
• 2
• ]
• H
• qw
• 2
• ⁢
• (
• λ
• n
• qw
• )
• +
• H
• fb
• (
• λ
• n
• fb
• )
• ≥
• 0.4
• where
• n
• qw
• =
• ∑
• n
• i
• ×
• ∑
• H
• i
• ∑
• H
• i
• where Hfb and Hqw are respective layer thicknesses of the last barrier layer and the active layer, n is a refractive index of the last barrier layer, and nqw is an equivalent refractive index of the active layer, and Y≥0.13X+12.7 is satisfied, where X is a layer thickness of the last barrier layer in nm, and Y is an average Al composition of the electron blocking layer in %.