Thin quantum barrier with high aluminum content for ultraviolet light emitters
AssigneeThe Regents of the University of California
InventorsYifan Yao, Matthew S. Wong, Hongjian Li, Michael Iza, Shuji Nakamura, Steven P. DenBaars
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Abstract
A laser diode (LD) or light emitting diode (LED) fabricated on an Aluminum Nitride (AlN) template on a sapphire, bulk AlN, or Silicon Carbide (SiC) substrate, wherein the thickness of the quantum barrier is thinner than a conventional design and the Al content of the quantum barrier is higher than the conventional design. Improved crystal quality and radiative efficiency can be achieved by minimizing the strain from the lattice mismatch during the growth. The result is an efficient UV LD/LED with an emission wavelength between 300 nm and 370 nm.
Claims18
An optoelectronic device, comprising:
- a substrate;
- an n-type region formed on or above the substrate;
- an active region formed on or above the n-type region;
- and
- a p-type region formed on or above the active region;
- wherein the active region is a light emitting region that emits ultraviolet (UV) light and the light emitting region contains at least one quantum well (QW) and quantum barrier (QB) structure in which the quantum barrier thickness is less than 10 nm.
An optoelectronic device, comprising:
- a substrate;
- an n-type region formed on or above the substrate;
- a first cladding region formed on or above the n-type region;
- a first waveguide region formed on or above the first cladding region;
- an active region formed on or above the first waveguide region;
- a second waveguide region formed on or above the active region;
- a second cladding region formed on or above the second waveguide region;
- and
- a p-type region formed on or above the second cladding region;
- wherein the active region is a light emitting region that emits ultraviolet (UV) light and the light emitting region contains at least one quantum well (QW) and quantum barrier (QB) structure in which the quantum barrier (QB) thickness is less than 10 nm.
A method of fabricating an optoelectronic device, comprising:
- forming at least one n-type region on a substrate;
- forming at least one active region on or above the n-type region, wherein the active region contains at least one quantum well (QW) and quantum barrier (QB) structure in which the quantum barrier (QB) thickness is less than 6 nm;
- forming at least one p-type region on or above the active region;
- and
- forming at least one ultraviolet transparent contact on or above the p-type region;
- wherein the active region emits ultraviolet (UV) light, and the n-type region, the p-type region and the ultraviolet transparent contact are fully or partially transparent to the UV light.
Dependencies are inferred from the claim text.