H01S 5/34313
With a well layer having only as as v-compound
Official title: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
H01S5/34313 (With a well layer having only as as v-compound) appears on 997 US grants and 924 published applications in this corpus.
Search patents in H01S- Granted patents
- 997
- Published applications
- 924
- Assignees
- 334
- Inventors
- 1,721
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 7 | 0 |
| 1987 | 6 | 0 |
| 1988 | 14 | 0 |
| 1989 | 20 | 0 |
| 1990 | 15 | 0 |
| 1991 | 19 | 0 |
| 1992 | 14 | 0 |
| 1993 | 26 | 0 |
| 1994 | 17 | 0 |
| 1995 | 21 | 0 |
| 1996 | 29 | 0 |
| 1997 | 19 | 0 |
| 1998 | 47 | 0 |
| 1999 | 27 | 0 |
| 2000 | 14 | 0 |
| 2001 | 22 | 3 |
| 2002 | 12 | 15 |
| 2003 | 13 | 19 |
| 2004 | 9 | 29 |
| 2005 | 21 | 59 |
| 2006 | 24 | 50 |
| 2007 | 24 | 51 |
| 2008 | 38 | 28 |
| 2009 | 33 | 32 |
| 2010 | 39 | 30 |
| 2011 | 23 | 13 |
| 2012 | 15 | 17 |
| 2013 | 14 | 20 |
| 2014 | 27 | 24 |
| 2015 | 23 | 45 |
| 2016 | 32 | 33 |
| 2017 | 34 | 46 |
| 2018 | 40 | 52 |
| 2019 | 44 | 43 |
| 2020 | 33 | 70 |
| 2021 | 34 | 49 |
| 2022 | 31 | 57 |
| 2023 | 33 | 46 |
| 2024 | 30 | 44 |
| 2025 | 31 | 23 |
| 2026 | 17 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Laser device, laser device array, and method of producing a laser device15 Sep 2026US 12,738,713 B2Sony Group Corporation
- Semiconductor laser device8 Sep 2026US 12,731,963 B2Mitsubishi Electric Corporation
- Semiconductor laser structure for higher-order mode suppression25 Aug 2026US 12,719,234 B2FreeSpace Photonics, Inc.
- Light emitting device25 Aug 2026US 12,719,236 B2Sony Semiconductor Solutions Corporation
- Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser element25 Aug 2026US 12,719,240 B2Hamamatsu Photonics K.K.
- Multi-cavity cascaded coupled vertical-cavity surface-emitting laser and manufacture method thereof1 Oct 2026US 2026/0302730 A1University of Electronic Science and Technology of China
- Light emitting element and distance measuring apparatus10 Sep 2026US 2026/0269573 A1Canon Kabushiki Kaisha
- Surface-emitting element20 Aug 2026US 2026/0246234 A1Sony Semiconductor Solutions Corporation
- Optical transmitter6 Aug 2026US 2026/0229842 A1Innolume GmbH
- Iii-v semiconductor device, assembly, and method6 Aug 2026US 2026/0229843 A1Innolume GmbH
Most cited
By later US patents
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Optical semiconductor device with diffraction grating structure249US 5,926,493 ASDL, Inc. · 1999
- Narrow spectral width high-power distributed feedback semiconductor lasers195US 6,195,381 B1Wisconsin Alumni Research Foundation · 2001
- Broadband light emitting device164US 7,019,325 B2Exalos AG · 2006
- Semiconductor laser device119US 6,175,582 B1Mitsui Chemicals, Inc. · 2001