Iii-v semiconductor device, assembly, and method

Abstract

A photonic III-V semiconductor device comprises at least one distributed feedback (DFB) laser diode having a laser active region, and at least one semiconductor optical amplifier (SOA) having an amplifier active region. The III-V semiconductor device comprises a III-V semiconductor heterostructure formed on a III-V semiconductor substrate, the III-V semiconductor heterostructure comprising an active layer structure between a lower cladding layer and an upper cladding layer; the active layer structure forming the laser active region and the amplifier active region. The device has an optical interface edge. The at least one DFB laser diode comprises an optical output facet, and the at least one SOA comprises an optical input facet. The at least one DFB laser diode and the at least one SOA are positioned in parallel with the output facet and the input facet lying on the optical interface edge.

Dependencies are inferred from the claim text.